RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393A1G40DB0-CPB 8GB
Transcend Information TS1GLH64V4H 8GB
Compare
Samsung M393A1G40DB0-CPB 8GB vs Transcend Information TS1GLH64V4H 8GB
Overall score
Samsung M393A1G40DB0-CPB 8GB
Overall score
Transcend Information TS1GLH64V4H 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393A1G40DB0-CPB 8GB
Report a bug
Reasons to consider
Transcend Information TS1GLH64V4H 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
49
Around -113% lower latency
Faster reading speed, GB/s
17.3
10.9
Average value in the tests
Faster write speed, GB/s
13.8
8.7
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393A1G40DB0-CPB 8GB
Transcend Information TS1GLH64V4H 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
49
23
Read speed, GB/s
10.9
17.3
Write speed, GB/s
8.7
13.8
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2427
3033
Samsung M393A1G40DB0-CPB 8GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB
Transcend Information TS1GLH64V4H 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation W4U2400PS-4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965525-018.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Samsung M393A1G40DB0-CPB 8GB
Transcend Information TS1GLH64V4H 8GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Kingston KVR16N11/8-SP 8GB
Kingston KY7N41-MID 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMT16GX4M2C3000C15 8GB
Samsung M471A1K43EB1-CWE 8GB
G Skill Intl F5-5600J4040C16G 16GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology M471A1K43BB1-CRC 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C16-8GTZKO 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M378A5244CB0-CRC 4GB
Team Group Inc. ZEUS-2133 8GB
G Skill Intl F4-3200C16-8GSX 8GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905663-016.A00G 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
Report a bug
×
Bug description
Source link