RAM comparison Samsung M471B5173DB0-YK0 4GB vs SK Hynix HMA851U6DJR6N-WM 4GB

Samsung M471B5173DB0-YK0 4GB vs SK Hynix HMA851U6DJR6N-WM 4GB

Overall score

Samsung M471B5173DB0-YK0 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M471B5173DB0-YK0 4GB

Reasons to consider
SK Hynix HMA851U6DJR6N-WM 4GB

Below the latency in the PassMark tests, ns

30 45

Around -50% lower latency
Faster reading speed, GB/s

16.3 12

Average value in the tests
Faster write speed, GB/s

12.2 7.8

Average value in the tests
Higher memory bandwidth, mbps

23400 12800

Around 1.83 higher bandwidth

Complete list of technical specifications

Samsung M471B5173DB0-YK0 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

Main characteristics

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)

1939 2761

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns