RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Compare
takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-3600C17-16GTZKW 16GB
Overall score
takeMS International AG TMS2GB264D082-805G 2GB
Overall score
G Skill Intl F4-3600C17-16GTZKW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D082-805G 2GB
Report a bug
Faster reading speed, GB/s
5
19.5
Average value in the tests
Reasons to consider
G Skill Intl F4-3600C17-16GTZKW 16GB
Report a bug
Below the latency in the PassMark tests, ns
29
46
Around -59% lower latency
Faster write speed, GB/s
15.7
1,852.4
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
29
Read speed, GB/s
5,535.6
19.5
Write speed, GB/s
1,852.4
15.7
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
858
3757
takeMS International AG TMS2GB264D082-805G 2GB RAM comparisons
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
G Skill Intl F4-3600C17-16GTZKW 16GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Ramaxel Technology RMUA5110MH78HAF-2666 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Kingston 9905403-061.A00LF 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMW16GX4M2D3600C18 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston K9CXF2-MIE 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3600C14-8GTZN 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4133C19-8GTZR 8GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK16GX4M2A2800C16 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
SK Hynix DDR2 800 2G 2GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB
Report a bug
×
Bug description
Source link