RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Patriot Memory (PDP Systems) PSD416G24002S 16GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Note globale
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Signaler un bogue
Raisons de considérer
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
13.7
13.4
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
10.6
9.0
Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps
19200
12800
Autour de 1.5 bande passante supérieure
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Principales caractéristiques
Type de mémoire
DDR3
DDR4
Latence dans PassMark, ns
29
29
Vitesse de lecture, GB/s
13.4
13.7
Vitesse d'écriture, GB/s
9.0
10.6
Largeur de bande de la mémoire, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Vitesse d'horloge
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2423
2422
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB Comparaison des RAM
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB Comparaison des RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
A-DATA Technology VDQVE1B16 2GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4266C19-8GTZR 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Samsung 1600 CL10 Series 8GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMR32GX4M4C3333C16 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Team Group Inc. Vulcan-1600 4GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
Kingston 9905403-444.A00LF 4GB
Corsair CMK8GX4M2B3733C17 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
Corsair CM2X1024-8500C5D 1GB
Maxsun MSD48G30M3 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
Signaler un bogue
×
Bug description
Source link