Samsung M471B5173EB0-YK0 4GB vs SK Hynix HMT451S6BFR8A-PB 4GB

Note globale

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Note globale

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Différences Spécifications Commentaires

Différences

Samsung M471B5173EB0-YK0 4GB

Raisons de considérer
Samsung M471B5173EB0-YK0 4GB

Signaler un bogue

Vitesse de lecture plus rapide, GB/s

13 12.3

Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s

8.2 7.8

Valeur moyenne dans les tests

SK Hynix HMT451S6BFR8A-PB 4GB

Raisons de considérer
SK Hynix HMT451S6BFR8A-PB 4GB

Signaler un bogue

Spécifications

Liste complète des spécifications techniques

Samsung M471B5173EB0-YK0 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Principales caractéristiques

Type de mémoire

DDR3 DDR3
Latence dans PassMark, ns

44 44
Vitesse de lecture, GB/s

13.0 12.3
Vitesse d'écriture, GB/s

8.2 7.8
Largeur de bande de la mémoire, mbps

12800 12800

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Timings / Vitesse d'horloge

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classement PassMark (Plus il y en a, mieux c'est)

2069 1977

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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