SK Hynix DDR2 800 2G 2GB vs Samsung M378A5143EB1-CPB 4GB

Note globale

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Note globale

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

Différences Spécifications Commentaires

Différences

SK Hynix DDR2 800 2G 2GB

Raisons de considérer
SK Hynix DDR2 800 2G 2GB

Signaler un bogue

Vitesse de lecture plus rapide, GB/s

2 14.6

Valeur moyenne dans les tests

Samsung M378A5143EB1-CPB 4GB

Raisons de considérer
Samsung M378A5143EB1-CPB 4GB

Signaler un bogue

En dessous de la latence dans les tests PassMark, ns

38 77

Autour de -103% latence réduite
Vitesse d'écriture plus rapide, GB/s

10.8 1,884.0

Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps

17000 6400

Autour de 2.66 bande passante supérieure

Spécifications

Liste complète des spécifications techniques

SK Hynix DDR2 800 2G 2GB

Samsung M378A5143EB1-CPB 4GB

Principales caractéristiques

Type de mémoire

DDR2 DDR4
Latence dans PassMark, ns

77 38
Vitesse de lecture, GB/s

2,936.9 14.6
Vitesse d'écriture, GB/s

1,884.0 10.8
Largeur de bande de la mémoire, mbps

6400 17000

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Vitesse d'horloge

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classement PassMark (Plus il y en a, mieux c'est)

564 2298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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