Samsung M471B5173QH0-YK0 4GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB

Punteggio complessivo

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Punteggio complessivo

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5173QH0-YK0 4GB

Motivi da considerare
Samsung M471B5173QH0-YK0 4GB

Velocità di lettura più elevata, GB/s

12.3 7.7

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.0 6.8

Valore medio nei test

Micron Technology 9ASF51272PZ-2G1AX 4GB

Motivi da considerare
Micron Technology 9ASF51272PZ-2G1AX 4GB

Al di sotto della latenza nei test PassMark, ns

39 45

Intorno -15% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 12800

Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M471B5173QH0-YK0 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

45 39
Velocità di lettura, GB/s

12.3 7.7
Velocità di scrittura, GB/s

8.0 6.8
Larghezza di banda della memoria, mbps

12800 17000

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

1992 1768

RAM Latency Calculator

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RAM 2

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