Samsung M471B5173DB0-YK0 4GB vs AMD R534G1601U1S 4GB

Pontuação geral

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Pontuação geral

AMD R534G1601U1S 4GB

AMD R534G1601U1S 4GB

Diferenças Especificações Comentários

Diferenças

Samsung M471B5173DB0-YK0 4GB

Razões a considerar
Samsung M471B5173DB0-YK0 4GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

45 68

Por volta de 34% menor latência
Velocidade de leitura mais rápida, GB/s

12 6.5

Valor médio nos testes
Velocidade de escrita mais rápida, GB/s

7.8 4.7

Valor médio nos testes

AMD R534G1601U1S 4GB

Razões a considerar
AMD R534G1601U1S 4GB

Relatar um erro

Especificações

Lista completa de especificações técnicas

Samsung M471B5173DB0-YK0 4GB

AMD R534G1601U1S 4GB

Características principais

Tipo de memória

DDR3 DDR3
Latência em PassMark, ns

45 68
Velocidade de leitura, GB/s

12.0 6.5
Velocidade de escrita, GB/s

7.8 4.7
Largura de banda de memória, mbps

12800 12800

Other

Descrição

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Tempos / Velocidade do relógio

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Ranking PassMark (Quanto mais, melhor)

1939 1209

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

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0 ns

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