A-DATA Technology ADOVE1A0834E 1GB vs Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 94

左右 -236% 更低的延时
更快的读取速度，GB/s

21.6 1

测试中的平均数值
更快的写入速度，GB/s

18.2 1,165.4

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 28
读取速度，GB/s

1,882.0 21.6
写入速度，GB/s

1,165.4 18.2
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

305 3890

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

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A-DATA Technology AD73I1C1674EV 4GB

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Crucial Technology CT16G4SFD824A.C16FBD 16GB

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Peak Electronics 256X64M-67E 2GB

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Kingmax Semiconductor GSAG42F-18---------- 8GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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Samsung M393A1G43DB1-CRC 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

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Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Kingston 9905743-044.A00G 16GB

Kingston 9905743-044.A00G 16GB

Kingston 9905471-076.A00LF 8GB

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Transcend Information TS1GLH64V1H 8GB

Transcend Information TS1GLH64V1H 8GB