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A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C15-8GTZKW 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB vs G Skill Intl F4-3200C15-8GTZKW 8GB

总分
star star star star star
A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分
star star star star star
G Skill Intl F4-3200C15-8GTZKW 8GB

G Skill Intl F4-3200C15-8GTZKW 8GB

差异 规格 评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB 需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
G Skill Intl F4-3200C15-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-3200C15-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 26
    左右 -44% 更低的延时
  • 更快的读取速度，GB/s
    19.9 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C15-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 18
  • 读取速度，GB/s
    14.0 left arrow 19.9
  • 写入速度，GB/s
    9.1 left arrow 15.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2330 left arrow 3421

A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较

Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3200C15-8GTZKW 8GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Apacer Technology 78.C1GS7.DFW0C 8GB
Apacer Technology 78.C1GS7.DFW0C 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C15-8GTZKW 8GB
G Skill Intl F4-3200C15-8GTZKW 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
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内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
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内存RAM
Samsung M471B5273EB0-CK0 4GB
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Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
内存RAM
Corsair CML8GX3M2A1600C9 4GB
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Crucial Technology CT8G4SFS824A.C8FAD1 8GB
内存RAM
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Corsair CMSO4GX3M1C1600C11 4GB
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Corsair CMW32GX4M4Z4000C18 8GB
内存RAM
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内存RAM
AMD AE34G1601U1 4GB
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内存RAM
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Kingston 9905458-017.A01LF 4GB
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G Skill Intl F4-4000C18-32GTZR 32GB
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Nanya Technology NT512T64U88B0BY-3C 512MB
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A-DATA Technology DDR4 3200 2OZ 4GB
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