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A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-3200C14-16GTZSW 16GB

A-DATA Technology DDR4 2400 16GB vs G Skill Intl F4-3200C14-16GTZSW 16GB

总分
star star star star star
A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZSW 16GB

G Skill Intl F4-3200C14-16GTZSW 16GB

差异 规格 评论

差异

A-DATA Technology DDR4 2400 16GB 需要考虑的原因
A-DATA Technology DDR4 2400 16GB
报告一个错误
G Skill Intl F4-3200C14-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZSW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 30
    左右 -15% 更低的延时
  • 更快的读取速度，GB/s
    20.6 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 11.5
    测试中的平均数值

规格

完整的技术规格清单
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-3200C14-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 26
  • 读取速度，GB/s
    16.8 left arrow 20.6
  • 写入速度，GB/s
    11.5 left arrow 16.7
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3019 left arrow 4084

A-DATA Technology DDR4 2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3200C14-16GTZSW 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Avant Technology W642GU42J5213N8 16GB
Avant Technology W642GU42J5213N8 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston KF3600C18D4/32GX 32GB
Kingston KF3600C18D4/32GX 32GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMT128GX4M8X3600C18 16GB
Corsair CMT128GX4M8X3600C18 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3200C16-8GTZKW 8GB
G Skill Intl F4-3200C16-8GTZKW 8GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Corsair CMK32GX4M4C3400C16 8GB
Corsair CMK32GX4M4C3400C16 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905702-121.A00G 8GB
Kingston 9905702-121.A00G 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2800C15-8GRBB 8GB
G Skill Intl F4-2800C15-8GRBB 8GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Samsung M393A2K40BB2-CTD 16GB
Samsung M393A2K40BB2-CTD 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Crucial Technology BL16G32C16U4W.16FE 16GB
内存RAM