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A-DATA Technology DOVF1B163G2G 2GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
比较
A-DATA Technology DOVF1B163G2G 2GB vs Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
总分
A-DATA Technology DOVF1B163G2G 2GB
总分
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB
报告一个错误
更快的读取速度,GB/s
4
16
测试中的平均数值
需要考虑的原因
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
56
左右 -100% 更低的延时
更快的写入速度,GB/s
11.2
1,925.7
测试中的平均数值
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DOVF1B163G2G 2GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
56
28
读取速度,GB/s
4,315.2
16.0
写入速度,GB/s
1,925.7
11.2
内存带宽,mbps
6400
25600
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
658
2901
A-DATA Technology DOVF1B163G2G 2GB RAM的比较
ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KVR533D2N4 512MB
Crucial Technology CT16G4S24AM.M16FE 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston 9905711-032.A00G 8GB
Kingston KHX2400C11D3/4GX 4GB
Crucial Technology CB8GS2666.C8ET 8GB
Samsung M471B5273CH0-CH9 4GB
Kingston K000MD44U 4GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3200C16-16GTZKW 16GB
Samsung M471B5273CH0-CH9 4GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9965643-006.A01G 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Samsung M471A5244BB0-CRC 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-3200C16-32GVK 32GB
Kingston KHX2133C11D3/4GX 4GB
SK Hynix HMA82GS6AFR8N-UH 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Samsung M471B5173DB0-YK0 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMK64GX4M8X3600C18 8GB
Corsair CM2X1024-6400C4 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
报告一个错误
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Bug description
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