A-DATA Technology DOVF1B163G2G 2GB vs INTENSO GKE800UD102408-2133 8GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

INTENSO GKE800UD102408-2133 8GB

INTENSO GKE800UD102408-2133 8GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值

INTENSO GKE800UD102408-2133 8GB

需要考虑的原因
INTENSO GKE800UD102408-2133 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 56

左右 -87% 更低的延时
更快的写入速度，GB/s

9.7 1,925.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

INTENSO GKE800UD102408-2133 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 30
读取速度，GB/s

4,315.2 15.5
写入速度，GB/s

1,925.7 9.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

658 2496

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

INTENSO GKE800UD102408-2133 8GB

INTENSO GKE800UD102408-2133 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Corsair CMR16GX4M2C3000C16 8GB

Corsair CMR16GX4M2C3000C16 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Elpida EBJ81UG8EFU0-GN-F 8GB

Elpida EBJ81UG8EFU0-GN-F 8GB

Elpida EBJ41UF8BDU0-GN-F 4GB

Elpida EBJ41UF8BDU0-GN-F 4GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-3866C18-8GTZKW 8GB

G Skill Intl F4-3866C18-8GTZKW 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

UMAX Technology 16GB

UMAX Technology 16GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMW32GX4M4C3200C14 8GB

Corsair CMW32GX4M4C3200C14 8GB

Kingston 99U5403-124.A00LF 8GB

Kingston 99U5403-124.A00LF 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-3200C22-16GRS 16GB

G Skill Intl F4-3200C22-16GRS 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB