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A-DATA Technology DQVE1908 512MB
Crucial Technology BL16G26C16U4R.16FE 16GB
比较
A-DATA Technology DQVE1908 512MB vs Crucial Technology BL16G26C16U4R.16FE 16GB
总分
A-DATA Technology DQVE1908 512MB
总分
Crucial Technology BL16G26C16U4R.16FE 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
更快的读取速度,GB/s
2
17.1
测试中的平均数值
需要考虑的原因
Crucial Technology BL16G26C16U4R.16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
66
左右 -128% 更低的延时
更快的写入速度,GB/s
13.0
1,557.9
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Crucial Technology BL16G26C16U4R.16FE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
66
29
读取速度,GB/s
2,775.5
17.1
写入速度,GB/s
1,557.9
13.0
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
382
3384
A-DATA Technology DQVE1908 512MB RAM的比较
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Crucial Technology BL16G26C16U4R.16FE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT31GR7CFR4C-PB 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMK16GX4M2Z2666C16 8GB
Kingston 99U5474-022.A00LF 2GB
Kingston 9905598-028.A00G 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3200C16-8GSXWB 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BL16G26C16U4R.16FE 16GB
Kingston KVR533D2N4 512MB
Kingston 9965690-002.A00G 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Samsung M471B5273DH0-CK0 4GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
PNY Electronics PNY 2GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL8G30C15U4R.8FE 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Apacer Technology D12.2324CS.001 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C14-8GTZRA 8GB
报告一个错误
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Bug description
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