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A-DATA Technology DQVE1B16 2GB
Apacer Technology 76.D305G.D060B 16GB

A-DATA Technology DQVE1B16 2GB vs Apacer Technology 76.D305G.D060B 16GB

总分
star star star star star
A-DATA Technology DQVE1B16 2GB

A-DATA Technology DQVE1B16 2GB

总分
star star star star star
Apacer Technology 76.D305G.D060B 16GB

Apacer Technology 76.D305G.D060B 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1B16 2GB 需要考虑的原因
A-DATA Technology DQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,285.0 left arrow 13.4
    测试中的平均数值
Apacer Technology 76.D305G.D060B 16GB 需要考虑的原因
Apacer Technology 76.D305G.D060B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 68
    左右 -106% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1B16 2GB
Apacer Technology 76.D305G.D060B 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 33
  • 读取速度，GB/s
    4,165.3 left arrow 16.6
  • 写入速度，GB/s
    2,285.0 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    784 left arrow 3089

A-DATA Technology DQVE1B16 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Corsair CMD8GX4M2B3466C18 4GB

Apacer Technology 76.D305G.D060B 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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DSL Memory D4SS12081SH21A-A 4GB
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Samsung M471B1G73QH0-YK0 8GB
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内存RAM
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内存RAM
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内存RAM
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Avant Technology F641GU67F9333G 8GB
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Hewlett-Packard 7EH61AA# 8GB
内存RAM