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A-DATA Technology VDQVE1B16 2GB
Corsair CMT16GX4M2K3600C16 8GB

A-DATA Technology VDQVE1B16 2GB vs Corsair CMT16GX4M2K3600C16 8GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Corsair CMT16GX4M2K3600C16 8GB

Corsair CMT16GX4M2K3600C16 8GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 16.4
    测试中的平均数值
Corsair CMT16GX4M2K3600C16 8GB 需要考虑的原因
Corsair CMT16GX4M2K3600C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 46
    左右 -92% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Corsair CMT16GX4M2K3600C16 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 24
  • 读取速度，GB/s
    4,937.3 left arrow 19.8
  • 写入速度，GB/s
    2,061.2 left arrow 16.4
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    759 left arrow 3889

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Corsair CMT16GX4M2K3600C16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Roa Logic BV W4U2666CX1-8G 8GB
Roa Logic BV W4U2666CX1-8G 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Kingston 9905625-097.A00G 16GB
Kingston 9905625-097.A00G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston MSI24D4U7D8MD-16 16GB
Kingston MSI24D4U7D8MD-16 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Corsair CMV8GX4M1A2666C18 8GB
Corsair CMV8GX4M1A2666C18 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CMV4GX4M1A2666C18 4GB
Corsair CMV4GX4M1A2666C18 4GB
内存RAM
SK Hynix HMT451S6AFR8A-PB 4GB
SK Hynix HMT451S6AFR8A-PB 4GB
SK Hynix HMT451S6MFR8A-PB 4GB
SK Hynix HMT451S6MFR8A-PB 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston KHX4800C19D4/8GX 8GB
Kingston KHX4800C19D4/8GX 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMSX32GX4M2A2666C18 16GB
Corsair CMSX32GX4M2A2666C18 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
内存RAM