AMD AE34G1601U1 4GB vs Kingston 9905678-139.A00G 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Kingston 9905678-139.A00G 8GB

Kingston 9905678-139.A00G 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Kingston 9905678-139.A00G 8GB

需要考虑的原因
Kingston 9905678-139.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 67

左右 -148% 更低的延时
更快的读取速度，GB/s

13.2 6.8

测试中的平均数值
更快的写入速度，GB/s

8.2 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Kingston 9905678-139.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 27
读取速度，GB/s

6.8 13.2
写入速度，GB/s

3.6 8.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

998 2324

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M2G4000C16 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

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Corsair CMH16GX4M2D3600C18 8GB

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Kingston KF2666C16S4/16G 16GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Essencore Limited KD48GU880-26N160T 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMR32GX4M2C3000C15 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Corsair CMR32GX4M4C3466C16 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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SK Hynix HMA81GR7AFR8N-VK 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

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Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Hyundai Inc GP-GR26C16S8K1HU408 8GB

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Kingston ACR256X64D3S1333C9 2GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CM4X4GF2400C16K4 4GB

Corsair CM4X4GF2400C16K4 4GB