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AMD R5316G1609U2K 8GB
Kingston 9905734-061.A00G 32GB

AMD R5316G1609U2K 8GB vs Kingston 9905734-061.A00G 32GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
Kingston 9905734-061.A00G 32GB

Kingston 9905734-061.A00G 32GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
Kingston 9905734-061.A00G 32GB 需要考虑的原因
Kingston 9905734-061.A00G 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 73
    左右 -97% 更低的延时
  • 更快的读取速度，GB/s
    14.3 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
Kingston 9905734-061.A00G 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 37
  • 读取速度，GB/s
    6.3 left arrow 14.3
  • 写入速度，GB/s
    5.2 left arrow 11.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 2841

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Kingston 9905734-061.A00G 32GB RAM的比较

Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Kingston 9905734-061.A00G 32GB
Kingston 9905734-061.A00G 32GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
内存RAM
G Skill Intl F4-3000C15-8GVGB 8GB
G Skill Intl F4-3000C15-8GVGB 8GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK64GX4M4A2666C16 16GB
Corsair CMK64GX4M4A2666C16 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung V-GeN D4S16GL32A8TS 16GB
Samsung V-GeN D4S16GL32A8TS 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-4266C19-8GTZKW 8GB
G Skill Intl F4-4266C19-8GTZKW 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston KF2666C15S4/8G 8GB
Kingston KF2666C15S4/8G 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3866C18-4GVK 4GB
G Skill Intl F4-3866C18-4GVK 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMD64GX4M4B3466C16 16GB
Corsair CMD64GX4M4B3466C16 16GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
内存RAM