AMD R5316G1609U2K 8GB vs Samsung M378A5143DB0-CPB 4GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Samsung M378A5143DB0-CPB 4GB

需要考虑的原因
Samsung M378A5143DB0-CPB 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 73

左右 -103% 更低的延时
更快的读取速度，GB/s

14.4 6.3

测试中的平均数值
更快的写入速度，GB/s

10.6 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Samsung M378A5143DB0-CPB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 36
读取速度，GB/s

6.3 14.4
写入速度，GB/s

5.2 10.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 2490

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2800C14-16GTZ 16GB

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Avant Technology F641GU67F9333G 8GB

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Kingston KF2666C16S4/16G 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kingston MSI24D4S7S8MH-8 8GB

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Avant Technology F641GU67F9333G 8GB

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G Skill Intl F4-2666C19-16GRS 16GB

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Crucial Technology CT8G4DFRA266.M4FE 8GB

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Kingston 99U5474-010.A00LF 2GB

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King Tiger Technology Tigo-X3-3200MHz-8G 8GB

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Corsair CMK64GX4M2Z4000C18 32GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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G Skill Intl F4-3733C17-8GTZKK 8GB

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Corsair CMY8GX3M2A2133C8 4GB

G Skill Intl F4-3000C16-8GSXFB 8GB

G Skill Intl F4-3000C16-8GSXFB 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

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Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-3600C19-16GTRS 16GB

G Skill Intl F4-3600C19-16GTRS 16GB

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Samsung M393B2G70BH0-CK0 16GB

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Golden Empire CL18-22-22 D4-3600 16GB