Corsair CMD16GX3M2A1866C9 8GB vs Kingston 9905624-016.A00G 8GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

Kingston 9905624-016.A00G 8GB

Kingston 9905624-016.A00G 8GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

更快的读取速度，GB/s

16 15.4

测试中的平均数值

Kingston 9905624-016.A00G 8GB

需要考虑的原因
Kingston 9905624-016.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 34

左右 -42% 更低的延时
更快的写入速度，GB/s

11.9 10.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

Kingston 9905624-016.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 24
读取速度，GB/s

16.0 15.4
写入速度，GB/s

10.3 11.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2782 2666

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393A2G40DB0-CPB 16GB

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A-DATA Technology DQKD1A08 1GB

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Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

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Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

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Micron Technology 16ATF2G64AZ-2G3B1 16GB

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Avant Technology F641GU67F9333G 8GB

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Kingston K821PJ-MID 16GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

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Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB