Corsair CMD8GX3M2A2933C12 4GB vs Corsair CM4X16GC3000C16K4D 16GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Corsair CM4X16GC3000C16K4D 16GB

Corsair CM4X16GC3000C16K4D 16GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

Corsair CM4X16GC3000C16K4D 16GB

需要考虑的原因
Corsair CM4X16GC3000C16K4D 16GB

报告一个错误

更快的读取速度，GB/s

17.6 13.5

测试中的平均数值
更快的写入速度，GB/s

13.3 9.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Corsair CM4X16GC3000C16K4D 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

13.5 17.6
写入速度，GB/s

9.3 13.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2278 3429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD8GX3M2A2933C12 4GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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SK Hynix HMA84GR7MFR4N-UH 32GB

Kingston KHX1600C9D3/8G 8GB

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Corsair CMD16GX4M4B3300C16 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Mushkin MR[A/B]4U346GJJM8G 8GB

Mushkin MR[A/B]4U346GJJM8G 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

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SK Hynix V-GeN D4H4GL30A8TX5 4GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Apacer Technology 78.CAGN7.4000C 8GB

Apacer Technology 78.CAGN7.4000C 8GB