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Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
比较
Corsair CMY8GX3M2A2666C10 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
总分
Corsair CMY8GX3M2A2666C10 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
低于PassMark测试中的延时,ns
17
23
左右 26% 更低的延时
更快的读取速度,GB/s
22.8
18.2
测试中的平均数值
更快的写入速度,GB/s
15.4
15.1
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
报告一个错误
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
17
23
读取速度,GB/s
22.8
18.2
写入速度,GB/s
15.4
15.1
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3391
3498
Corsair CMY8GX3M2A2666C10 4GB RAM的比较
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB RAM的比较
Kingston KVR16N11/8-SP 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT25664AA800.M16FM 2GB
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Kingston 9905403-134.A00LF 2GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905624-019.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Kingston 9905701-131.A00G 16GB
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Kingston KP223C-ELD 2GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
Kingston 9965433-034.A00LF 4GB
Corsair CMR32GX4M2C3000C16 16GB
报告一个错误
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