Corsair CMY8GX3M2A2666C10 4GB vs Micron Technology 36JSF1G72PZ-1G6K1 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Micron Technology 36JSF1G72PZ-1G6K1 8GB

Micron Technology 36JSF1G72PZ-1G6K1 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 44

左右 61% 更低的延时
更快的读取速度，GB/s

22.8 9.9

测试中的平均数值
更快的写入速度，GB/s

15.4 8.0

测试中的平均数值

Micron Technology 36JSF1G72PZ-1G6K1 8GB

需要考虑的原因
Micron Technology 36JSF1G72PZ-1G6K1 8GB

报告一个错误

更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Micron Technology 36JSF1G72PZ-1G6K1 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

17 44
读取速度，GB/s

22.8 9.9
写入速度，GB/s

15.4 8.0
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

3391 2162

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT325U6CFR8C-PB 2GB

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Samsung M3 78T2863QZS-CF7 1GB

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Panram International Corporation W4U2133PS-8G 8GB

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Kingston 9905403-156.A00LF 2GB

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Corsair CMSX64GX4M2A2666C18 32GB

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