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Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
比较
Corsair CMZ16GX3M2A2400C10 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
总分
Corsair CMZ16GX3M2A2400C10 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
低于PassMark测试中的延时,ns
37
40
左右 8% 更低的延时
更快的读取速度,GB/s
11.4
9.1
测试中的平均数值
更快的写入速度,GB/s
7.4
6.9
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
40
读取速度,GB/s
11.4
9.1
写入速度,GB/s
7.4
6.9
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1683
2031
Corsair CMZ16GX3M2A2400C10 8GB RAM的比较
G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
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Kingston 99U5595-005.A00LF 2GB
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Kingston KHX2133C14S4/16G 16GB
Apacer Technology 78.C1GET.9K10C 8GB
G Skill Intl F4-3200C18-8GRS 8GB
Kingston 99U5471-030.A00LF 8GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
报告一个错误
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Bug description
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