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Corsair CMZ16GX3M2A2400C10 8GB
V-GEN D4H8GL32A8TS 8GB

Corsair CMZ16GX3M2A2400C10 8GB vs V-GEN D4H8GL32A8TS 8GB

总分
star star star star star
Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分
star star star star star
V-GEN D4H8GL32A8TS 8GB

V-GEN D4H8GL32A8TS 8GB

差异 规格 评论

差异

Corsair CMZ16GX3M2A2400C10 8GB 需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 40
    左右 8% 更低的延时
V-GEN D4H8GL32A8TS 8GB 需要考虑的原因
V-GEN D4H8GL32A8TS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
V-GEN D4H8GL32A8TS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 40
  • 读取速度，GB/s
    11.4 left arrow 17.5
  • 写入速度，GB/s
    7.4 left arrow 9.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1683 left arrow 2462

Corsair CMZ16GX3M2A2400C10 8GB RAM的比较

G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB

V-GEN D4H8GL32A8TS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
V-GEN D4H8GL32A8TS 8GB
V-GEN D4H8GL32A8TS 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Apacer Technology GD2.1527WE.001 8GB
Apacer Technology GD2.1527WE.001 8GB
内存RAM
Samsung M471B1G73BH0-YK0 8GB
Samsung M471B1G73BH0-YK0 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905663-008.A00G 16GB
Kingston 9905663-008.A00G 16GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3466C16-8GTZR 8GB
G Skill Intl F4-3466C16-8GTZR 8GB
内存RAM
Kingston 9905402-414.A00LF 2GB
Kingston 9905402-414.A00LF 2GB
Kingston 9905471-001.A00LF 2GB
Kingston 9905471-001.A00LF 2GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Kingston X5H5PW-MIB 8GB
Kingston X5H5PW-MIB 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMD64GX4M4B3466C16 16GB
Corsair CMD64GX4M4B3466C16 16GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4X4GD3000C15K4 4GB
Corsair CM4X4GD3000C15K4 4GB
内存RAM