Corsair VS1GB800D2 1GB vs Hyundai Inc AR36C18S8K2HU416R 8GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 20

测试中的平均数值

Hyundai Inc AR36C18S8K2HU416R 8GB

需要考虑的原因
Hyundai Inc AR36C18S8K2HU416R 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 47

左右 -147% 更低的延时
更快的写入速度，GB/s

17.5 1,361.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

Hyundai Inc AR36C18S8K2HU416R 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 19
读取速度，GB/s

4,680.7 20.0
写入速度，GB/s

1,361.1 17.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

460 3499

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair VS1GB800D2 1GB

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Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

Corsair CMV4GX3M1B1600C11 4GB

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Kingston K821PJ-MIB 16GB

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Kingston ACR512X64D3S13C9G 4GB

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Panram International Corporation PUD42400C154G4NJK 4GB

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Micron Technology 16ATF2G64AZ-2G6B1 16GB

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Samsung M378A1K43DB2-CTD 8GB

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Samsung M393B1K70QB0-CK0 8GB

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Crucial Technology CT8G4SFS832A.M8FRS 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Kingston 9905663-021.A00G 16GB

Kingston 9905663-021.A00G 16GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

DSL Memory D4SS12082SH21A-A 8GB

DSL Memory D4SS12082SH21A-A 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

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Samsung M471A1K43CB1-CRC 8GB