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Corsair VS2GB1333D4 2GB
SK Hynix HMA851U6AFR6N-UH 4GB

Corsair VS2GB1333D4 2GB vs SK Hynix HMA851U6AFR6N-UH 4GB

总分
star star star star star
Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

总分
star star star star star
SK Hynix HMA851U6AFR6N-UH 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

差异 规格 评论

差异

Corsair VS2GB1333D4 2GB 需要考虑的原因
Corsair VS2GB1333D4 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 36
    左右 31% 更低的延时
SK Hynix HMA851U6AFR6N-UH 4GB 需要考虑的原因
SK Hynix HMA851U6AFR6N-UH 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 7.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair VS2GB1333D4 2GB
SK Hynix HMA851U6AFR6N-UH 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 36
  • 读取速度，GB/s
    12.9 left arrow 15.0
  • 写入速度，GB/s
    7.9 left arrow 10.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1947 left arrow 2292

Corsair VS2GB1333D4 2GB RAM的比较

Corsair VS2GB1333D3 2GB
Avant Technology W641GU67J5213N8 8GB

SK Hynix HMA851U6AFR6N-UH 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair VS2GB1333D4 2GB
Corsair VS2GB1333D4 2GB
SK Hynix HMA851U6AFR6N-UH 4GB
SK Hynix HMA851U6AFR6N-UH 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston KF2933C17S4/16G 16GB
Kingston KF2933C17S4/16G 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Transcend Information TS1GLH64V4H 8GB
Transcend Information TS1GLH64V4H 8GB
内存RAM
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-2400C16-8GIS 8GB
G Skill Intl F4-2400C16-8GIS 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
SK Hynix HMA41GU7AFR8N-TF 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Apacer Technology 78.C1GS7.DFW0C 8GB
Apacer Technology 78.C1GS7.DFW0C 8GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Samsung M378A2G43MX3-CTD 16GB
Samsung M378A2G43MX3-CTD 16GB
内存RAM