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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology CB8GS2400.C8D 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 89
    左右 67% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 6.8
    测试中的平均数值
Crucial Technology CB8GS2400.C8D 8GB 需要考虑的原因
Crucial Technology CB8GS2400.C8D 8GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CB8GS2400.C8D 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 89
  • 读取速度，GB/s
    16.9 left arrow 13.6
  • 写入速度，GB/s
    12.0 left arrow 6.8
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 1518

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Crucial Technology CB8GS2400.C8D 8GB RAM的比较

G Skill Intl F4-2800C15-4GVR 4GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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SK Hynix HMT351R7EFR8C-RD 4GB
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内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
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Crucial Technology CT51264BD1339.M16F 4GB
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Kingston 9905403-011.A03LF 2GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M471B5673FH0-CF8 2GB
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内存RAM
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology BLS8G4S26BFSDK.8FD 8GB
内存RAM
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G Skill Intl F4-3200C16-16GTZ 16GB
内存RAM