Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Kingston HP26D4U6S8ME-8X 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Kingston HP26D4U6S8ME-8X 8GB

Kingston HP26D4U6S8ME-8X 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

Kingston HP26D4U6S8ME-8X 8GB

需要考虑的原因
Kingston HP26D4U6S8ME-8X 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 -16% 更低的延时
更快的读取速度，GB/s

17.6 16.9

测试中的平均数值
更快的写入速度，GB/s

14.0 12.0

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston HP26D4U6S8ME-8X 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 25
读取速度，GB/s

16.9 17.6
写入速度，GB/s

12.0 14.0
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2601 3297

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

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Panram International Corporation PUD42400C154GNJW 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-2400C16-16GFXR 16GB

G Skill Intl F4-2400C16-16GFXR 16GB