Crucial Technology BLS8G3N169ES4.16FE 8GB vs InnoDisk Corporation M4S0-8GSSOCIK 8GB

总分

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

总分

InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

差异规格评论

差异

Crucial Technology BLS8G3N169ES4.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G3N169ES4.16FE 8GB

报告一个错误

更快的写入速度，GB/s

8.8 8.7

测试中的平均数值

InnoDisk Corporation M4S0-8GSSOCIK 8GB

需要考虑的原因
InnoDisk Corporation M4S0-8GSSOCIK 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 41

左右 -71% 更低的延时
更快的读取速度，GB/s

15.9 13.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS8G3N169ES4.16FE 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 24
读取速度，GB/s

13.3 15.9
写入速度，GB/s

8.8 8.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2394 2326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G3N169ES4.16FE 8GB

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Kingston 9905403-174.A00LF 2GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB