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Crucial Technology CT51264BF160B.M16F 4GB
Kingston KHX2133C14D4/4G 4GB
比较
Crucial Technology CT51264BF160B.M16F 4GB vs Kingston KHX2133C14D4/4G 4GB
总分
Crucial Technology CT51264BF160B.M16F 4GB
总分
Kingston KHX2133C14D4/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
33
左右 15% 更低的延时
需要考虑的原因
Kingston KHX2133C14D4/4G 4GB
报告一个错误
更快的读取速度,GB/s
15.9
11.8
测试中的平均数值
更快的写入速度,GB/s
11.7
8.2
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BF160B.M16F 4GB
Kingston KHX2133C14D4/4G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
33
读取速度,GB/s
11.8
15.9
写入速度,GB/s
8.2
11.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1854
2727
Crucial Technology CT51264BF160B.M16F 4GB RAM的比较
Samsung M471B5173QH0-YK0 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Kingston KHX2133C14D4/4G 4GB RAM的比较
Samsung M378A1K43DB2-CTD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-10600CL9-2GBNT 2GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
Kingston 99U5403-492.A00LF 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Kingston MSI16D3LS1MNG/8G 8GB
G Skill Intl F4-3300C16-16GTZSW 16GB
Corsair CMD8GX3M2A2933C12 4GB
Kllisre M471A1K43CB1-CTD 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 99U5700-010.A00G 8GB
Protocol Engines Kingrock 800 2GB 2GB
Kingston ACR26D4U9S8MH-8 8GB
Samsung M393B5270CH0-CH9 4GB
Apacer Technology 78.CAGN7.4000C 8GB
Avant Technology F641GU67F9333G 8GB
G Skill Intl F4-3200C14-16GTZKW 16GB
SK Hynix HMT41GS6BFR8A-PB 8GB
G Skill Intl F4-3600C16-32GTZN 32GB
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology AFSD416ES1P 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Apacer Technology 75.A73AA.G03 2GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
报告一个错误
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Bug description
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