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Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB vs Micron Technology 18ASF1G72PZ-2G1A2 8GB

总分
star star star star star
Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分
star star star star star
Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

差异 规格 评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB 需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 49
    左右 49% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 10.5
    测试中的平均数值
Micron Technology 18ASF1G72PZ-2G1A2 8GB 需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1A2 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.3 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 49
  • 读取速度，GB/s
    13.8 left arrow 10.5
  • 写入速度，GB/s
    8.2 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2152 left arrow 2374

Elpida EBJ21UE8BDF0-DJ-F 2GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Micron Technology CT8G4DFD8213.16FA2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Hewlett-Packard 7EH55AA# 8GB
Hewlett-Packard 7EH55AA# 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-4266C16-8GTZR 8GB
G Skill Intl F4-4266C16-8GTZR 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMK32GX4M4C3000C16 8GB
Corsair CMK32GX4M4C3000C16 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CMW64GX4M8C3466C16 8GB
Corsair CMW64GX4M8C3466C16 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3000C16-16GSXFB 16GB
G Skill Intl F4-3000C16-16GSXFB 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT8G4DFD8213.C16FDD2 8GB
Crucial Technology CT8G4DFD8213.C16FDD2 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
内存RAM