Elpida EBJ40UG8EFU0-GN-F 4GB vs Crucial Technology BLS8G4S26BFSD.16FD2 8GB

总分

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

差异规格评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB

需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB

报告一个错误

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

需要考虑的原因
Crucial Technology BLS8G4S26BFSD.16FD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 43

左右 -72% 更低的延时
更快的读取速度，GB/s

14.9 12.7

测试中的平均数值
更快的写入速度，GB/s

11.5 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40UG8EFU0-GN-F 4GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 25
读取速度，GB/s

12.7 14.9
写入速度，GB/s

8.0 11.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 2466

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Crucial Technology CT25664AA800.M16FG 2GB

Transcend Information JM2666HLE-16G 16GB

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Corsair CMW32GX4M4Z4000C18 8GB

Samsung M3 78T2863QZS-CF7 1GB

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SK Hynix HMA41GR7AFR4N-UH 8GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3200C14-8GTZ 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2666C18-32GVK 32GB

G Skill Intl F4-2666C18-32GVK 32GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Samsung M391A1K43BB1-CRC 8GB

Samsung M391A1K43BB1-CRC 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMK64GX4M4K3733C17 16GB

Corsair CMK64GX4M4K3733C17 16GB