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G Skill Intl F2-8500CL5-2GBPI 2GB
Avant Technology J642GU42J5213NF 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs Avant Technology J642GU42J5213NF 16GB

总分
star star star star star
G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分
star star star star star
Avant Technology J642GU42J5213NF 16GB

Avant Technology J642GU42J5213NF 16GB

差异 规格 评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB 需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,935.8 left arrow 11.0
    测试中的平均数值
Avant Technology J642GU42J5213NF 16GB 需要考虑的原因
Avant Technology J642GU42J5213NF 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 45
    左右 -67% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Avant Technology J642GU42J5213NF 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 27
  • 读取速度，GB/s
    6,336.8 left arrow 14.2
  • 写入速度，GB/s
    2,935.8 left arrow 11.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1144 left arrow 2596

G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较

OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB

Avant Technology J642GU42J5213NF 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
G Skill Intl F4-2400C16-8GRS 8GB
G Skill Intl F4-2400C16-8GRS 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-4133C19-8GTZRF 8GB
G Skill Intl F4-4133C19-8GTZRF 8GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
G Skill Intl F4-3600C19-16GSXF 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Avant Technology J642GU42J5213NF 16GB
Avant Technology J642GU42J5213NF 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2800C18-16GRS 16GB
G Skill Intl F4-2800C18-16GRS 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston KMKYF9-MID 8GB
Kingston KMKYF9-MID 8GB
内存RAM