G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology CT8G4DFD8213.C16FDD2 8GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Crucial Technology CT8G4DFD8213.C16FDD2 8GB

Crucial Technology CT8G4DFD8213.C16FDD2 8GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 7% 更低的延时

Crucial Technology CT8G4DFD8213.C16FDD2 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FDD2 8GB

报告一个错误

更快的读取速度，GB/s

17.2 13.2

测试中的平均数值
更快的写入速度，GB/s

12.3 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT8G4DFD8213.C16FDD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 28
读取速度，GB/s

13.2 17.2
写入速度，GB/s

8.4 12.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 3090

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF1G64AZ-3G2J1 8GB

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Corsair CMT16GX4M2K4000C19 8GB

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Kingston 99U5471-012.A00LF 4GB

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Hyundai Inc GR26C16S8K2HU416 8GB

Hyundai Inc GR26C16S8K2HU416 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BL8G30C15U4B.M8FE 8GB

Crucial Technology BL8G30C15U4B.M8FE 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-2400C15-4GRB 4GB

G Skill Intl F4-2400C15-4GRB 4GB