G Skill Intl F3-1333C9-4GIS 4GB vs G Skill Intl F4-2400C15-8GTZRX 8GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

G Skill Intl F4-2400C15-8GTZRX 8GB

G Skill Intl F4-2400C15-8GTZRX 8GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

G Skill Intl F4-2400C15-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GTZRX 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 28

左右 -27% 更低的延时
更快的读取速度，GB/s

17.4 12.4

测试中的平均数值
更快的写入速度，GB/s

12.7 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-2400C15-8GTZRX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 22
读取速度，GB/s

12.4 17.4
写入速度，GB/s

7.5 12.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2014 3135

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-090.A01LF 4GB

Corsair CMT32GX4M2C3200C14 16GB

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Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3200C14-8GTZRX 8GB

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Samsung M471A1K1KBB1-CRC 8GB

Samsung M471A1K1KBB1-CRC 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Ramsta Ramsta-2400Mhz-4G 4GB

Ramsta Ramsta-2400Mhz-4G 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston XK2M26-MIE 16GB

Kingston XK2M26-MIE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD16GX4M4B2133C10 4GB

Corsair CMD16GX4M4B2133C10 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Corsair CMK32GX4M4A2400C16 8GB

Corsair CMK32GX4M4A2400C16 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMK32GX4M4B4000C19 8GB

Corsair CMK32GX4M4B4000C19 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Crucial Technology CT16G4DFD824A.M16FJ 16GB

Crucial Technology CT16G4DFD824A.M16FJ 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB