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G Skill Intl F3-2800C12-8GTXDG 8GB
SK Hynix HMA82GU7AFR8N-UH 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB vs SK Hynix HMA82GU7AFR8N-UH 16GB

总分
star star star star star
G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分
star star star star star
SK Hynix HMA82GU7AFR8N-UH 16GB

SK Hynix HMA82GU7AFR8N-UH 16GB

差异 规格 评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB 需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 32
    左右 34% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 9.0
    测试中的平均数值
SK Hynix HMA82GU7AFR8N-UH 16GB 需要考虑的原因
SK Hynix HMA82GU7AFR8N-UH 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2800C12-8GTXDG 8GB
SK Hynix HMA82GU7AFR8N-UH 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 32
  • 读取速度，GB/s
    17.4 left arrow 13.2
  • 写入速度，GB/s
    12.2 left arrow 9.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3130 left arrow 2349

G Skill Intl F3-2800C12-8GTXDG 8GB RAM的比较

Corsair CMY32GX3M4B2666C11 8GB
Kingston 9905734-102.A00G 32GB

SK Hynix HMA82GU7AFR8N-UH 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-4266C19-8GTRS 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
内存RAM
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Corsair CMK64GX4M4D3600C18 16GB
Corsair CMK64GX4M4D3600C18 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology CB8GS2400.C8D 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-3000C15-8GVS 8GB
G Skill Intl F4-3000C15-8GVS 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Kingston 9905734-061.A00G 32GB
Kingston 9905734-061.A00G 32GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMT16GX4M2C3600C18 8GB
Corsair CMT16GX4M2C3600C18 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM