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G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLS16G4D30BESB.16FD 16GB

G Skill Intl F4-4000C14-16GTZR 16GB vs Crucial Technology BLS16G4D30BESB.16FD 16GB

总分
star star star star star
G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

总分
star star star star star
Crucial Technology BLS16G4D30BESB.16FD 16GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

差异 规格 评论

差异

G Skill Intl F4-4000C14-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 50
    左右 42% 更低的延时
  • 更快的读取速度，GB/s
    24 left arrow 17.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    20.0 left arrow 13.1
    测试中的平均数值
Crucial Technology BLS16G4D30BESB.16FD 16GB 需要考虑的原因
Crucial Technology BLS16G4D30BESB.16FD 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 50
  • 读取速度，GB/s
    24.0 left arrow 17.2
  • 写入速度，GB/s
    20.0 left arrow 13.1
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    4156 left arrow 3277

G Skill Intl F4-4000C14-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB

Crucial Technology BLS16G4D30BESB.16FD 16GB RAM的比较

G Skill Intl F4-3600C19-16GSXKB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Corsair CMD16GX4M4B3000C14 4GB
Corsair CMD16GX4M4B3000C14 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M378A2K43CB1-CRC 16GB
Samsung M378A2K43CB1-CRC 16GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-3600C18-32GTZN 32GB
G Skill Intl F4-3600C18-32GTZN 32GB
内存RAM
Kllisre KRE-D3U1600M/8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Samsung M386A2G40DB0-CPB 16GB
Samsung M386A2G40DB0-CPB 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-2666C15-8GRKB 8GB
G Skill Intl F4-2666C15-8GRKB 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3000C15-4GRK 4GB
G Skill Intl F4-3000C15-4GRK 4GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-2400C16-8GRSB 8GB
G Skill Intl F4-2400C16-8GRSB 8GB
内存RAM