Golden Empire 1GB DDR2 800 CAS=4 1GB vs SK Hynix HMA451R7AFR8N-UH 4GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

SK Hynix HMA451R7AFR8N-UH 4GB

SK Hynix HMA451R7AFR8N-UH 4GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

低于PassMark测试中的延时，ns

49 55

左右 11% 更低的延时
更快的读取速度，GB/s

4 10

测试中的平均数值

SK Hynix HMA451R7AFR8N-UH 4GB

需要考虑的原因
SK Hynix HMA451R7AFR8N-UH 4GB

报告一个错误

更快的写入速度，GB/s

7.8 2,066.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

SK Hynix HMA451R7AFR8N-UH 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 55
读取速度，GB/s

4,577.1 10.0
写入速度，GB/s

2,066.5 7.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

737 2232

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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SK Hynix HMA451R7AFR8N-UH 4GB

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Kingston KF552C40-16 16GB

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Kingston 9905702-137.A00G 8GB

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Kingston 9905403-156.A00LF 2GB

V-GEN D4S8GL32A8TS 8GB

V-GEN D4S8GL32A8TS 8GB

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Samsung M378B5273CH0-CH9 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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G Skill Intl F4-3200C14-8GTZ 8GB