Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology CT8G4DFS8213.C8FBR1 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 14.4

测试中的平均数值

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FBR1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 62

左右 -88% 更低的延时
更快的写入速度，GB/s

9.0 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 33
读取速度，GB/s

3,556.6 14.4
写入速度，GB/s

1,843.6 9.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 2486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Maxsun MSD48G30Q3 8GB

Maxsun MSD48G30Q3 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Panram International Corporation W4U2666PS-8GC19 8GB

Panram International Corporation W4U2666PS-8GC19 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9965589-024.D01G 16GB

Kingston 9965589-024.D01G 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Apacer Technology 78.C1GMM.AUC0B 8GB

Apacer Technology 78.C1GMM.AUC0B 8GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4A