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Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A1G44AB0-CWE 8GB

Hexon Technology Pte Ltd HEXON 1GB vs Samsung M378A1G44AB0-CWE 8GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.5
    测试中的平均数值
Samsung M378A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M378A1G44AB0-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 62
    左右 -63% 更低的延时
  • 更快的写入速度，GB/s
    10.9 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A1G44AB0-CWE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 38
  • 读取速度，GB/s
    3,556.6 left arrow 16.5
  • 写入速度，GB/s
    1,843.6 left arrow 10.9
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    542 left arrow 2829

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Samsung M378A1G44AB0-CWE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G44AB0-CWE 8GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Avant Technology F6451U64F9333G 4GB
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内存RAM
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Ramaxel Technology RMUA5200MR78HAF-3200 8GB
内存RAM
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SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3000C15-4GRBB 4GB
G Skill Intl F4-3000C15-4GRBB 4GB
内存RAM