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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Crucial Technology CT8G4DFS824A.C8FJ 8GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Crucial Technology CT8G4DFS824A.C8FJ 8GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
37
左右 27% 更低的延时
更快的读取速度,GB/s
16.7
16.3
测试中的平均数值
更快的写入速度,GB/s
11.8
10.2
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Crucial Technology CT8G4DFS824A.C8FJ 8GB
报告一个错误
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
37
读取速度,GB/s
16.7
16.3
写入速度,GB/s
11.8
10.2
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2756
2658
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
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Mushkin MR[ABC]4U320GJJM8G 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston 9905630-005.A00G 8GB
Samsung M378B5173BH0-CH9 4GB
Gloway International (HK) STK4U2133D15081C 8GB
Qimonda 64T128020EDL2.5C2 1GB
G Skill Intl F4-2400C16-16GFX 16GB
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-3200C16-8GTZN 8GB
Kingston 99U5584-004.A00LF 4GB
Avant Technology J641GU42J5213ND 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology BL16G26C16U4W.16FD 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M378A2G43MX3-CTD 16GB
Kingston 9905471-006.A01LF 4GB
Samsung M378A4G43MB1-CTD 32GB
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
报告一个错误
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