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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
V-GEN D4H4GL26A8TS5 4GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs V-GEN D4H4GL26A8TS5 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

总分
star star star star star
V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 67
    左右 49% 更低的延时
V-GEN D4H4GL26A8TS5 4GB 需要考虑的原因
V-GEN D4H4GL26A8TS5 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 8.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 5.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
V-GEN D4H4GL26A8TS5 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 67
  • 读取速度，GB/s
    8.6 left arrow 16.2
  • 写入速度，GB/s
    5.8 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1682 left arrow 1798

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB
Kingston 99P5723-006.A00G 8GB

V-GEN D4H4GL26A8TS5 4GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
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最新比较

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