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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Corsair CMH32GX4M2E3200C16 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Corsair CMH32GX4M2E3200C16 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Corsair CMH32GX4M2E3200C16 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
34
左右 15% 更低的延时
需要考虑的原因
Corsair CMH32GX4M2E3200C16 16GB
报告一个错误
更快的读取速度,GB/s
18.4
13.4
测试中的平均数值
更快的写入速度,GB/s
13.8
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Corsair CMH32GX4M2E3200C16 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
34
读取速度,GB/s
13.4
18.4
写入速度,GB/s
9.0
13.8
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2423
3447
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Corsair CMH32GX4M2E3200C16 16GB RAM的比较
Samsung M378B5673EH1-CF8 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905701-021.A00G 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-2666C19-8GSXK 8GB
SK Hynix HMT42GR7AFR4C-RD 16GB
G Skill Intl F4-3333C16-8GVK 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMD16GX4M2C3333C16 8GB
Samsung M3 78T2863EHS-CF7 1GB
Hewlett-Packard 7EH55AA# 8GB
Samsung M393B5270CH0-CH9 4GB
Golden Empire CL16-16-16 D4-3000 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
ASint Technology SSA302G08-EGN1C 4GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9965662-010.A00G 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Samsung M3 78T2863QZS-CF7 1GB
SK Hynix HMA81GR7AFR8N-UH 8GB
Samsung M378T5663QZ3-CF7 2GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
报告一个错误
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Bug description
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