Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Kingston XK2M26-MIE-NX 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分

Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

报告一个错误

Kingston XK2M26-MIE-NX 16GB

需要考虑的原因
Kingston XK2M26-MIE-NX 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 62

左右 -72% 更低的延时
更快的读取速度，GB/s

19.2 7.4

测试中的平均数值
更快的写入速度，GB/s

11.8 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Kingston XK2M26-MIE-NX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

62 36
读取速度，GB/s

7.4 19.2
写入速度，GB/s

5.9 11.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1612 3256

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-2400C15-16GFX 16GB

G Skill Intl F4-2400C15-16GFX 16GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS4G4D240FSC.8FARG 4GB

Crucial Technology BLS4G4D240FSC.8FARG 4GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

Corsair CMK16GX4M4B3300C16 4GB

Corsair CMK16GX4M4B3300C16 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS16G4D240FSB.16FD 16GB

Crucial Technology BLS16G4D240FSB.16FD 16GB

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Avant Technology W6451U66J7240ND 4GB

Avant Technology W6451U66J7240ND 4GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston 8ATF1G64AZ-2G3A141 8GB

Kingston 8ATF1G64AZ-2G3A141 8GB