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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
SK Hynix HMA81GR7MFR8N-UH 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs SK Hynix HMA81GR7MFR8N-UH 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
总分
SK Hynix HMA81GR7MFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
56
左右 50% 更低的延时
更快的读取速度,GB/s
10.9
9.5
测试中的平均数值
需要考虑的原因
SK Hynix HMA81GR7MFR8N-UH 8GB
报告一个错误
更快的写入速度,GB/s
7.2
7.1
测试中的平均数值
更高的内存带宽,mbps
19200
8500
左右 2.26 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
SK Hynix HMA81GR7MFR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
56
读取速度,GB/s
10.9
9.5
写入速度,GB/s
7.1
7.2
内存带宽,mbps
8500
19200
Other
描述
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1668
2138
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM的比较
SK Hynix HMT351S6AFR8C-G7 4GB
Corsair CMK16GX4M4B3200C16 4GB
SK Hynix HMA81GR7MFR8N-UH 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-061.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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报告一个错误
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Bug description
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