Infineon (Siemens) 64T32000HU3.7A 256MB vs Corsair CMN32GX4M2Z3600C16 16GB

总分

Infineon (Siemens) 64T32000HU3.7A 256MB

Infineon (Siemens) 64T32000HU3.7A 256MB

总分

Corsair CMN32GX4M2Z3600C16 16GB

Corsair CMN32GX4M2Z3600C16 16GB

差异规格评论

差异

Infineon (Siemens) 64T32000HU3.7A 256MB

需要考虑的原因
Infineon (Siemens) 64T32000HU3.7A 256MB

报告一个错误

更快的读取速度，GB/s

3 18.6

测试中的平均数值

Corsair CMN32GX4M2Z3600C16 16GB

需要考虑的原因
Corsair CMN32GX4M2Z3600C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 49

左右 -104% 更低的延时
更快的写入速度，GB/s

15.8 1,681.5

测试中的平均数值
更高的内存带宽，mbps

25600 4200

左右 6.1 更高的带宽

规格

完整的技术规格清单

Infineon (Siemens) 64T32000HU3.7A 256MB

Corsair CMN32GX4M2Z3600C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 24
读取速度，GB/s

3,204.9 18.6
写入速度，GB/s

1,681.5 15.8
内存带宽，mbps

4200 25600

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

4-4-4-12 / 533 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

324 3800

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology CT4G4DFS8266.C8FE 4GB

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Infineon (Siemens) 64T32000HU3.7A 256MB

Infineon (Siemens) 64T32000HU3.7A 256MB

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Corsair CMN32GX4M2Z3600C16 16GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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Hexon Technology Pte Ltd HEXON 1GB

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Smart Modular SF4641G8CKHIWDFSEG 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMW8GX4M1D3000C16 8GB

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Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Kingston KHX3466C17D4/16GX 16GB

Kingston KHX3466C17D4/16GX 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M474A2K43BB1-CPB 16GB

Samsung M474A2K43BB1-CPB 16GB