Kingmax Semiconductor FLFE85F-C8KM9 2GB vs G Skill Intl F4-4600C18-8GTRS 8GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

G Skill Intl F4-4600C18-8GTRS 8GB

G Skill Intl F4-4600C18-8GTRS 8GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

G Skill Intl F4-4600C18-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-4600C18-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 26

左右 -24% 更低的延时
更快的读取速度，GB/s

21.4 11.9

测试中的平均数值
更快的写入速度，GB/s

19.6 7.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

G Skill Intl F4-4600C18-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 21
读取速度，GB/s

11.9 21.4
写入速度，GB/s

7.6 19.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1610 4293

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-2400C15-16GFX 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905403-038.A00LF 4GB

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Corsair CMW64GX4M8A2666C16 8GB

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Kingston KP223C-ELD 2GB

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Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

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Samsung M471A1K43BB0-CPB 8GB

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Apacer Technology 78.01GA0.9K5 1GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

A-DATA Technology AX4S2800316G18-B 16GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

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Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

Crucial Technology CT16G4SFD8266.16FE1 16GB