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Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB

Kingston 2GB-DDR2 800Mhz 2GB vs Micron Technology 18ASF1G72AZ-2G1A1 8GB

总分
star star star star star
Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分
star star star star star
Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

差异 规格 评论

差异

Kingston 2GB-DDR2 800Mhz 2GB 需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 17.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,160.7 left arrow 13.1
    测试中的平均数值
Micron Technology 18ASF1G72AZ-2G1A1 8GB 需要考虑的原因
Micron Technology 18ASF1G72AZ-2G1A1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 43
    左右 -87% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 23
  • 读取速度，GB/s
    5,987.5 left arrow 17.2
  • 写入速度，GB/s
    2,160.7 left arrow 13.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    957 left arrow 2989

Kingston 2GB-DDR2 800Mhz 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CM4X32GC3200C16K2E 32GB
Corsair CM4X32GC3200C16K2E 32GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD64GX4M4C3200C16 16GB
Corsair CMD64GX4M4C3200C16 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Essencore Limited KD48GU880-32A160U 8GB
Essencore Limited KD48GU880-32A160U 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology 78.C1GMM.BAC0B 8GB
Apacer Technology 78.C1GMM.BAC0B 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMR128GX4M8X3800C19 16GB
Corsair CMR128GX4M8X3800C19 16GB
内存RAM
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
Kingston KVR26N19D8/16 16GB
Kingston KVR26N19D8/16 16GB
内存RAM
Micron Technology 8JTF51264AZ-1G6E1 4GB
Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-3000C15-4GVSB 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Samsung M393A1K43BB1-CTD 8GB
Samsung M393A1K43BB1-CTD 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-2666C18-4GFX 4GB
G Skill Intl F4-2666C18-4GFX 4GB
内存RAM