Kingston 2GB-DDR2 800Mhz 2GB vs Micron Technology 8ATF1G64AZ-2G6B1 8GB

总分

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

差异规格评论

差异

Kingston 2GB-DDR2 800Mhz 2GB

需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB

报告一个错误

更快的读取速度，GB/s

5 19.1

测试中的平均数值
更快的写入速度，GB/s

2,160.7 14.5

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G6B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G6B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 43

左右 -105% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingston 2GB-DDR2 800Mhz 2GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

43 21
读取速度，GB/s

5,987.5 19.1
写入速度，GB/s

2,160.7 14.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

957 3427

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G36C16U4RL.M16FE 16GB

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Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

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Avant Technology F6451U64F9333G 4GB

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Corsair CMX4GX3M2A1600C9 2GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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AMD R7416G2400U2S 16GB

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Kingston KTD3KX-MIB 8GB

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Corsair CMX8GX3M2A2000C9 4GB

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Crucial Technology CT8G4DFD8213.C16FDR2 8GB

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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378B5673EH1-CF8 2GB

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GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

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Samsung M471B5273BH1-CF8 4GB

G Skill Intl F4-3200C16-16GTZKW 16GB

G Skill Intl F4-3200C16-16GTZKW 16GB